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STGB18N40LZ STGD18N40LZ, STGP18N40LZ
EAS 180 mJ - 390 V - internally clamped IGBT
Features
■ AEC Q101 compliant ■ 180 mJ of avalanche energy @ TC = 150 °C,
L = 3 mH ■ ESD gate-emitter protection ■ Gate-collector high voltage clamping ■ Logic level gate drive ■ Low saturation voltage ■ High pulsed current capability ■ Gate and gate-emitter resistor
Application
■ Pencil coil electronic ignition driver
Description
This application-specific IGBT utilizes the most advanced PowerMESH™ technology. The built-in Zener diodes between gate-collector and gateemitter provide overvoltage protection capabilities. The device also exhibits low on-state voltage drop and low threshold drive for use in automotive ignition system.
IPAK
3
2 1
3 1
DPAK
123
I²PAK
3 2 1
TO-220
3 1
D²PAK
Figure 1.
STGB18N40LZ Datasheet
