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STFI4N62K3 - N-channel Power MOSFET

Download the STFI4N62K3 datasheet PDF (STF4N62K3 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for n-channel power mosfet.

Description

These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure.

Features

  • TAB Order codes STF4N62K3 STFI4N62K3 STI4N62K3 STP4N62K3 STU4N62K3 VDSS RDS(on) max ID 620 V < 2 Ω 3.8 A PTOT 25 W 25 W 70 W 70 W 70 W.
  • 100% avalanche tested.
  • Extremely high dv/dt capability.
  • Gate charge minimized.
  • Very low intrinsic capacitance.
  • Improved diode reverse recovery characteristics.
  • Zener-protected 3 2 1 TO-220FP TAB 1 23 I²PAKFP TAB 3 2 1 TO-220 123 I²PAK IPAK 3 2 1 Figure 1. Internal schematic diagram D(2,TAB).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STF4N62K3_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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STF4N62K3, STFI4N62K3, STI4N62K3, STP4N62K3, STU4N62K3 N-channel 620 V, 1.7 Ω typ., 3.8 A SuperMESH3™ Power MOSFET in TO-220FP, I²PAKFP, I²PAK, TO-220 and IPAK packages Datasheet — production data Features TAB Order codes STF4N62K3 STFI4N62K3 STI4N62K3 STP4N62K3 STU4N62K3 VDSS RDS(on) max ID 620 V < 2 Ω 3.8 A PTOT 25 W 25 W 70 W 70 W 70 W ■ 100% avalanche tested ■ Extremely high dv/dt capability ■ Gate charge minimized ■ Very low intrinsic capacitance ■ Improved diode reverse recovery characteristics ■ Zener-protected 3 2 1 TO-220FP TAB 1 23 I²PAKFP TAB 3 2 1 TO-220 123 I²PAK IPAK 3 2 1 Figure 1.
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