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STFI26N60M2 - N-channel Power MOSFET

Description

AM15572v1_no_tab technology.

Features

  • Order code VDS RDS(on) max. ID t(s) 1 23 c I2PAKFP u (TO-281) Prod D(2) STFI26N60M2 650 V 165 mΩ 20 A.
  • Extremely low gate charge.
  • Excellent output capacitance (Coss) profile.
  • 100% avalanche tested.
  • Zener-protected.

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Datasheet preview – STFI26N60M2

Datasheet Details

Part number STFI26N60M2
Manufacturer STMicroelectronics
File Size 213.45 KB
Description N-channel Power MOSFET
Datasheet download datasheet STFI26N60M2 Datasheet
Additional preview pages of the STFI26N60M2 datasheet.

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Full PDF Text Transcription

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STFI26N60M2 Datasheet N-channel 600 V, 140 mΩ typ., 20 A MDmesh M2 Power MOSFET in an I²PAKFP package Features Order code VDS RDS(on) max. ID t(s) 1 23 c I2PAKFP u (TO-281) Prod D(2) STFI26N60M2 650 V 165 mΩ 20 A • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100% avalanche tested • Zener-protected Applications te • Switching applications le G(1) • LCC converters, resonant converters bso Description - O This device is an N-channel Power MOSFET developed using MDmesh M2 t(s) S(3) AM15572v1_no_tab technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it csuitable for the most demanding high efficiency converters.
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