Datasheet4U Logo Datasheet4U.com

STF9N60M2 - N-CHANNEL POWER MOSFET

Description

These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg.

These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge.

Features

  • Order codes STF9N60M2 STFI9N60M2 VDS @ TJmax RDS(on) max ID 650 V 0.78 Ω 5.5 A.
  • Extremely low gate charge.
  • Lower RDS(on) x area vs previous generation.
  • Low gate input resistance.
  • 100% avalanche tested.
  • Zener-protected Figure 1. Internal schematic diagram.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STF9NK90Z N-channel MOSFET ST Microelectronics
STF9NM60N N-Channel MOSFET INCHANGE
STF Three PhaseNeutral Filters PREMO CORPORATION
STF-xxxHV Three-Phase + Neutral Line Filters Premo
STF0402 COMMON MODE CHOKE Superworld Electronics

Other Datasheets by STMicroelectronics

Part Number Description
STF9N65M2 N-channel Power MOSFET
STF9N80K5 N-CHANNEL POWER MOSFET
STF9NK60ZD N-channel Power MOSFET
STF9NK80Z N-channel Power MOSFET
STF9NM50N N-channel Power MOSFET

Full PDF Text Transcription

Click to expand full text
STF9N60M2, STFI9N60M2 N-channel 600 V, 0.72 Ω typ., 5.5 A MDmesh II Plus™ low Qg Power MOSFETs in TO-220FP and I2PAKFP packages Datasheet - production data 3 2 1 TO-220FP 1 23 I2PAKFP (TO-281) Features Order codes STF9N60M2 STFI9N60M2 VDS @ TJmax RDS(on) max ID 650 V 0.78 Ω 5.5 A • Extremely low gate charge • Lower RDS(on) x area vs previous generation • Low gate input resistance • 100% avalanche tested • Zener-protected Figure 1. Internal schematic diagram Applications • Switching applications Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg.
Published: |