Datasheet4U Logo Datasheet4U.com

STF4LN80K5 - N-channel Power MOSFET

Description

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure.

The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Features

  • Order code STF4LN80K5 VDS 800 V RDS(on) max. 2.6 Ω ID 3A.
  • Industry’s lowest RDS(on).
  • area.
  • Industry’s best FoM (figure of merit).
  • Ultra low-gate charge.
  • 100% avalanche tested.
  • Zener-protected.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STF4045C SCHOTTKY RECTIFIER SMC Diode
STF4080C SCHOTTKY RECTIFIER SMC Diode
STF42N65M5 N-Channel Power MOSFET ST Microelectronics
STF42N65M5 N-Channel MOSFET INCHANGE
STF443 P-Channel Enhancement Mode Field Effect Transistor SamHop Microelectronics

Other Datasheets by STMicroelectronics

Part Number Description
STF4LNK60Z N-channel Power MOSFET
STF40N20 Low gate charge STripFET Power MOSFET
STF40N60M2 N-CHANNEL POWER MOSFET
STF40N65M2 N-channel Power MOSFET
STF40NF03L N-channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STF4LN80K5 N-channel 800 V, 2.1 Ω typ., 3 A MDmesh™ K5 Power MOSFET in a TO-220FP package Datasheet - production data TO-220FP Figure 1: Internal schematic diagram Features Order code STF4LN80K5 VDS 800 V RDS(on) max. 2.6 Ω ID 3A  Industry’s lowest RDS(on) * area  Industry’s best FoM (figure of merit)  Ultra low-gate charge  100% avalanche tested  Zener-protected Applications  Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
Published: |