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STF27N60M2-EP - N-channel Power MOSFET

Description

These devices are N-channel Power MOSFETs developed using MDmesh™ M2 EP enhanced performance technology.

Features

  • Order code STF27N60M2-EP V DS 600 V RDS(on) max 0.163 Ω ID 20 A TO-220FP Figure 1: Internal schematic diagram D(2) G(1) S(3) AM15572v1_no_tab.
  • Extremely low gate charge.
  • Excellent output capacitance (COSS) profile.
  • Very low turn-off switching losses.
  • 100% avalanche tested.
  • Zener-protected.

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Full PDF Text Transcription

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STF27N60M2-EP N-channel 600 V, 0.150 Ω typ., 20 A MDmesh™ M2 EP Power MOSFET in TO-220FP package Datasheet - production data Features Order code STF27N60M2-EP V DS 600 V RDS(on) max 0.163 Ω ID 20 A TO-220FP Figure 1: Internal schematic diagram D(2) G(1) S(3) AM15572v1_no_tab  Extremely low gate charge  Excellent output capacitance (COSS) profile  Very low turn-off switching losses  100% avalanche tested  Zener-protected Applications  Switching applications  Tailored for very high frequency converters (f > 150 kHz) Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 EP enhanced performance technology.
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