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STF26NM60N-H
N-channel 600 V, 0.135 Ω , 20 A MDmesh™ II Power MOSFET in TO-220FP
Features
Type STF26NM60N-H
■ ■ ■
VDSS 600 V
RDS(on) max < 0.165 Ω
ID 20 A
100% avalanche tested Low input capacitance and gate charge Low gate input resistance
1 3 2
Application
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TO-220FP
Switching applications
Description
This series of devices implements second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
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Figure 1.
Internal schematic diagram
$
'
3
3#
Table 1.
STF26NM60N-H Datasheet
