Datasheet4U Logo Datasheet4U.com

STF16N60M2 - N-channel Power MOSFET

Description

This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology.

Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.

Features

  • Order code STF16N60M2 VDS 600 V RDS(on) max. 0.32 Ω ID 12 A.
  • Extremely low gate charge.
  • Excellent output capacitance (COSS) profile.
  • 100% avalanche tested.
  • Zener-protected.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STF16N65M5 N-Channel MOSFET INCHANGE
STF16360EN Static VFD 36 segment display driver integrated circuits YGWCO
STF16360EN Static VFD drive circuit ETC
STF16A60 Bi-Directional Triode Thyristor ETC
STF16A60 Bi-Directional Triode Thyristor Semiwell

Other Datasheets by STMicroelectronics

Part Number Description
STF16N60M6 N-channel Power MOSFET
STF16N65M2 N-channel Power MOSFET
STF16N65M5 N-channel Power MOSFET
STF16N50M2 N-CHANNEL POWER MOSFET
STF16N50U N-channel Power MOSFET

Full PDF Text Transcription

Click to expand full text
STF16N60M2 N-channel 600 V, 0.28 Ω typ., 12 A MDmesh™ M2 Power MOSFET in a TO-220FP package Datasheet - production data 3 12 TO-220FP Figure 1: Internal schematic diagram D(2) G(1) Features Order code STF16N60M2 VDS 600 V RDS(on) max. 0.32 Ω ID 12 A • Extremely low gate charge • Excellent output capacitance (COSS) profile • 100% avalanche tested • Zener-protected Applications • Switching applications Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.
Published: |