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STF140N6F7 - N-CHANNEL POWER MOSFET

Description

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Features

  • Order code STF140N6F7 VDS 60 V RDS(on) max. 0.0035 Ω ID 70 A PTOT 33 W.
  • Among the lowest RDS(on) on the market.
  • Excellent figure of merit (FoM).
  • Low Crss/Ciss ratio for EMI immunity.
  • High avalanche ruggedness.

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Full PDF Text Transcription

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STF140N6F7 N-channel 60 V, 0.0031 Ω typ., 70 A STripFET™ F7 Power MOSFET in a TO-220FP package Datasheet - production data TO-220FP Figure 1: Internal schematic diagram Features Order code STF140N6F7 VDS 60 V RDS(on) max. 0.0035 Ω ID 70 A PTOT 33 W  Among the lowest RDS(on) on the market  Excellent figure of merit (FoM)  Low Crss/Ciss ratio for EMI immunity  High avalanche ruggedness Applications  Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
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