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STF110N10F7 - N-CHANNEL POWER MOSFET

General Description

These devices utilize the 7th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.

The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.

Table 1.

Key Features

  • TAB 3 2 1 TO-220FP 3 2 1 TO-220 Order codes VDS RDS(on) max ID PTOT STF110N10F7 100 V 0.007 Ω STP110N10F7 45 A 30 W 110 A 150 W.
  • Ultra low on-resistance.
  • 100% avalanche tested.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STF110N10F7, STP110N10F7 N-channel 100 V, 5.1 mΩ typ., 110 A, STripFET™ VII DeepGATE™ Power MOSFETs in TO-220FP and TO-220 packages Datasheet - production data Features TAB 3 2 1 TO-220FP 3 2 1 TO-220 Order codes VDS RDS(on) max ID PTOT STF110N10F7 100 V 0.007 Ω STP110N10F7 45 A 30 W 110 A 150 W • Ultra low on-resistance • 100% avalanche tested Applications • Switching applications Figure 1. Internal schematic diagram ' 7$% Description These devices utilize the 7th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. *  6  $0Y Order codes STF110N10F7 STP110N10F7 Table 1.