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STDLED625H - N-channel Power MOSFET

Description

These Power MOSFETs boast extremely low onresistance and very good dv/dt capability, rendering them suitable for buck-boost and flyback topologies.

Table 1.

Features

  • Order code VDS RDS(on) max ID PTOT TAB t(s) 3 1 uc DPAK olete Prod Figure 1. Internal schematic diagram bs D(2,TAB) roduct(s) - O G(1) STDLED625H 620 V 2Ω 4.5 A 70 W.
  • 100% avalanche tested.
  • Extremely high dv/dt capability.
  • Gate charge minimized.
  • Very low intrinsic capacitance.
  • Improved diode reverse recovery characteristics.
  • Zener-protected.

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Datasheet Details

Part number STDLED625H
Manufacturer STMicroelectronics
File Size 1.26 MB
Description N-channel Power MOSFET
Datasheet download datasheet STDLED625H Datasheet
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Full PDF Text Transcription

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STDLED625H N-channel 620 V, 1.7 Ω, 4.5 A Power MOSFET in a DPAK package Datasheet − preliminary data Features Order code VDS RDS(on) max ID PTOT TAB t(s) 3 1 uc DPAK olete Prod Figure 1. Internal schematic diagram bs D(2,TAB) roduct(s) - O G(1) STDLED625H 620 V 2Ω 4.5 A 70 W • 100% avalanche tested • Extremely high dv/dt capability • Gate charge minimized • Very low intrinsic capacitance • Improved diode reverse recovery characteristics • Zener-protected Applications • LED lighting applications Description These Power MOSFETs boast extremely low onresistance and very good dv/dt capability, rendering them suitable for buck-boost and flyback topologies. lete P S(3) Obso AM01476v1 Order code STDLED625H Table 1.
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