Datasheet4U Logo Datasheet4U.com

STD85N10F7AG - N-CHANNEL POWER MOSFET

Description

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Table 1.

Features

  • Order code VDS RDS(on) max STD85N10F7AG 100 V 0.010 Ω ID 70 A PTOT 85 W.
  • Designed for automotive.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STD80N10F7 N-Channel MOSFET INCHANGE
STD8100 SCHOTTKY RECTIFIER SMC Diode
STD8200 SCHOTTKY RECTIFIER SANGDEST MICROELECTRONICS
STD83003 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ST Microelectronics
STD830CP20 Complementary transistor pair ST Microelectronics

Other Datasheets by STMicroelectronics

Part Number Description
STD85N3LH5 N-channel Power MOSFET
STD8010 Flexible MPEG audio/video codec
STD80N10F7 N-CHANNEL POWER MOSFET
STD80N240K6 N-channel Power MOSFET
STD80N340K6 N-channel Power MOSFET

Full PDF Text Transcription

Click to expand full text
STD85N10F7AG Automotive-grade N-channel 100 V, 0.0085 Ω typ., 70 A STripFET™ F7 Power MOSFET in a DPAK package Datasheet - production data TAB 3 1 DPAK Features Order code VDS RDS(on) max STD85N10F7AG 100 V 0.010 Ω ID 70 A PTOT 85 W • Designed for automotive applications and AEC-Q101 qualified • Among the lowest RDS(on) on the market • Excellent figure of merit (FoM) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Figure 1. Internal schematic diagram Applications • Switching applications ' 7$% *  Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Published: |