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STD47N10F7AG - N-CHANNEL POWER MOSFET

Description

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Features

  • Order code VDS STD47N10F7AG 100 V RDS(on) max. 18 mΩ ID PTOT 45 A 60 W Figure 1: Internal schematic diagram D(2, TAB) G(1) S(3).
  • AEC-Q101 qualified.
  • Among the lowest RDS(on) on the market.
  • Excellent FoM (figure of merit).
  • Low Crss/Ciss ratio for EMI immunity.
  • High avalanche ruggedness.

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Full PDF Text Transcription

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STD47N10F7AG Automotive-grade N-channel 100 V, 12.5 mΩ typ., 45 A, STripFET™ F7 Power MOSFET in a DPAK package Datasheet - production data Features Order code VDS STD47N10F7AG 100 V RDS(on) max. 18 mΩ ID PTOT 45 A 60 W Figure 1: Internal schematic diagram D(2, TAB) G(1) S(3)  AEC-Q101 qualified  Among the lowest RDS(on) on the market  Excellent FoM (figure of merit)  Low Crss/Ciss ratio for EMI immunity  High avalanche ruggedness Applications  Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
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