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STD46P4LLF6
P-channel 40 V, 0.0125 Ω typ., StripFET™ F6
Power MOSFET in a DPAK package
Datasheet - production data
Figure 1: Internal schematic diagram
D(2, TAB)
G(1)
Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss
Applications
Switching applications
Description
This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.
Table 1: Device summary Order codes Marking Package Packaging
STD46P4LLF6 46P4LLF6 DPAK
Tape and reel
S(3)
Features
Order codes STD46P4LLF6
VDSS 40 V
RDS(on) max.
0.