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STD37P3H6AG - P-CHANNEL POWER MOSFET

Description

This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure.

The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Features

  • Order code VDS RDS(on) max. ID PTOT STD37P3H6AG -30 V 15 mΩ -49 A 60 W.
  • Designed for automotive.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STD37P3H6AG Automotive-grade P-channel -30 V, 11 mΩ typ., -49 A STripFET™ H6 Power MOSFET in a DPAK package Datasheet - production data Figure 1: Internal schematic diagram D(2, TAB) G(1) Features Order code VDS RDS(on) max. ID PTOT STD37P3H6AG -30 V 15 mΩ -49 A 60 W • Designed for automotive applications and AEC-Q101 qualified • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss Applications • Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
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