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STD26P3LLH6 - P-CHANNEL POWER MOSFET

Description

developed using the 6 generation of STripFET™ DeepGATE™ technology, with a new gate structure.

Table 1.

Features

  • TAB 23 1 DPAK Figure 1. Internal schematic diagram D(2 or TAB) G(1) Order code VDSS RDS(on) max ID STD26P3LLH6 30 V 0.030 Ω(1) 12 A 1. @ VGS= 10 V.
  • RDS(on).
  • Qg industry benchmark.
  • Extremely low on-resistance RDS(on).
  • High avalanche ruggedness.
  • Low gate input resistance PTOT 40 W.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STD26P3LLH6 P-channel 30 V, 0.024 Ω typ., 12 A, STripFET™ VI DeepGATE™ Power MOSFET in a DPAK package Datasheet - production data Features TAB 23 1 DPAK Figure 1. Internal schematic diagram D(2 or TAB) G(1) Order code VDSS RDS(on) max ID STD26P3LLH6 30 V 0.030 Ω(1) 12 A 1. @ VGS= 10 V • RDS(on) * Qg industry benchmark • Extremely low on-resistance RDS(on) • High avalanche ruggedness • Low gate input resistance PTOT 40 W Applications • Switching applications • LCC converters, resonant converters Description This device is a P-channel Power MOSFET th developed using the 6 generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages S(3) AM11258v1 Order code STD26P3LLH6 Table 1.
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