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STD15N60M2-EP - N-channel Power MOSFET

General Description

This device is an N-channel Power MOSFET developed using MDmesh M2 enhanced performance (EP) technology.

Key Features

  • Order code VDS @ TJmax RDS(on) max. ID STD15N60M2-EP 650 V 0.378 Ω 11 A.
  • Extremely low gate charge.
  • Excellent output capacitance (COSS) profile.
  • Very low turn-off switching losses.
  • 100% avalanche tested.
  • Zener-protected.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STD15N60M2-EP Datasheet N-channel 600 V, 0.340 Ω typ., 11 A MDmesh M2 EP Power MOSFET in a DPAK package TAB 23 1 DPAK D(2, TAB) G(1) S(3) Features Order code VDS @ TJmax RDS(on) max. ID STD15N60M2-EP 650 V 0.378 Ω 11 A • Extremely low gate charge • Excellent output capacitance (COSS) profile • Very low turn-off switching losses • 100% avalanche tested • Zener-protected Applications • Switching applications • Tailored for very high frequency converters (f > 150 kHz) Description AM01476v1_tab This device is an N-channel Power MOSFET developed using MDmesh M2 enhanced performance (EP) technology.