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STD14NM50NAG - N-CHANNEL POWER MOSFET

Description

of MDmesh™ technology.

and gate charge.

Features

  • Order code STD14NM50NAG VDS 500 V RDS(on) max. 0.320 Ω ID 12 A.
  • AEC-Q101 qualified.
  • 100% avalanche tested.
  • Low input capacitance and gate charge.
  • Low gate input resistance.

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Full PDF Text Transcription

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STD14NM50NAG Datasheet Automotive-grade N-channel 500 V, 0.285 Ω typ., 12 A MDmesh™ II Power MOSFET in a DPAK package TAB 23 1 DPAK D(2, TAB) Features Order code STD14NM50NAG VDS 500 V RDS(on) max. 0.320 Ω ID 12 A • AEC-Q101 qualified • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance Applications G(1) • Switching applications S(3) Description AM01475v1_noZen This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
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