STD10NM60ND Key Features
- Fast-recovery body diode
- Low gate charge and input capacitance
- Low on-resistance RDS(on)
- 100% avalanche tested
- High dv/dt ruggedness
- Part: STD10NM60ND
- Manufacturer: STMicroelectronics (official site)
- Size: 832.10 KB
Other STD10NM60ND Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
STMicroelectronics |
STD10NM60N | N-Channel Power MOSFET |
Inchange Semiconductor |
STD10NM60N | N-Channel MOSFET |
STD10NM60ND Description
AM01475v1_noZen This FDmesh II Power MOSFET with fast-recovery body diode is produced using MDmesh II technology. Utilizing a new strip-layout vertical structure, this device.