STB51N60DM6
Features
Order code
RDS(on) max.
600 V
80 mΩ
36 A
- Fast-recovery body diode
- Lower RDS(on) per area vs previous generation
- Low gate charge, input capacitance and resistance
- 100% avalanche tested
- Extremely high dv/dt ruggedness
- Zener-protected
Applications
G(1)
- Switching applications
Description
S(3)
AM01476v1_tab
This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series. pared with the previous MDmesh fast generation, DM6 bines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Product status link STB51N60DM6
Product summary
Order code
Marking
51N60DM6
Package
D²PAK
Packing
Tape and reel
DS14618
- Rev 1
- February 2024 For further information contact your local...
