STB51N60DM6 Datasheet PDF - STMicroelectronics N-channel Power MOSFET Specs

STB51N60DM6 - N-channel Power MOSFET

Datasheet Summary

Description

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series.

Features

Order code VDS RDS(on) max. ID STB51N60DM6 600 V 80 mΩ 36 A.
Fast-recovery body diode.
Lower RDS(on) per area vs previous generation.
Low gate charge, input capacitance and resistance.
100% avalanche tested.
Extremely high dv/dt ruggedness.
Zener-protected.

Datasheet Details

Part number	STB51N60DM6
Manufacturer	STMicroelectronics
File Size	732.60 KB
Description	N-channel Power MOSFET
Datasheet	STB51N60DM6 Datasheet
Additional preview pages of the STB51N60DM6 datasheet.

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Full PDF Text Transcription

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Prerelease product(s) STB51N60DM6 Datasheet N-channel 600 V, 70 mΩ typ., 36 A, MDmesh DM6 Power MOSFET in a D²PAK package TAB 2 3 1 D²PAK D(2, TAB) Features Order code VDS RDS(on) max. ID STB51N60DM6 600 V 80 mΩ 36 A • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100% avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Applications G(1) • Switching applications Description S(3) AM01476v1_tab This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series.

Published: Mar 4, 2024 |