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STB4NC60A-1 - N-CHANNEL MOSFET

Description

The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™.

area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.

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Datasheet preview – STB4NC60A-1

Datasheet Details

Part number STB4NC60A-1
Manufacturer STMicroelectronics
File Size 268.72 KB
Description N-CHANNEL MOSFET
Datasheet download datasheet STB4NC60A-1 Datasheet
Additional preview pages of the STB4NC60A-1 datasheet.

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Full PDF Text Transcription

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N-CHANNEL 600V - 1.8Ω - 4.2A TO-220/TO-220FP/I2PAK PowerMesh™II MOSFET TYPE STP4NC60A STP4NC60AFP www.DataSheet4U.com STB4NC60A-1 s s s s s STP4NC60A - STP4NC60AFP STB4NC60A-1 VDSS 600V 600V 600V RDS(on) < 2Ω < 2Ω < 2Ω ID 4.2A 4.2A 4.2A 3 1 2 TYPICAL RDS(on) = 1.8Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED TO-220 TO-220FP DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.
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