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STB4NC60 - N-CHANNEL MOSFET

Description

The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™.

area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.

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Datasheet preview – STB4NC60

Datasheet Details

Part number STB4NC60
Manufacturer STMicroelectronics
File Size 380.80 KB
Description N-CHANNEL MOSFET
Datasheet download datasheet STB4NC60 Datasheet
Additional preview pages of the STB4NC60 datasheet.

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Full PDF Text Transcription

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N-CHANNEL 600V - 1.8Ω - 4.2A D2PAK PowerMesh™II MOSFET TYPE STB4NC60 www.DataSheet4U.com s TYPICAL s s s s STB4NC60 VDSS 600V RDS(on) < 2.2Ω ID 4.2A RDS(on) = 1.8Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED 3 1 DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.
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