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STB4NB50 - N-CHANNEL MOSFET

Description

Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances.

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Datasheet Details

Part number STB4NB50
Manufacturer STMicroelectronics
File Size 80.97 KB
Description N-CHANNEL MOSFET
Datasheet download datasheet STB4NB50 Datasheet
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® STB4NB50 N - CHANNEL 500V - 2.5Ω - 3.8A - D2PAK/I2PAK PowerMESH™ MOSFET PRELIMINARY DATA TYPE STB4NB50 www.DataSheet4U.com s s s s s V DSS 500 V R DS(on) < 2.8 Ω ID 3.8 A TYPICAL RDS(on) = 2.5 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 3 12 1 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
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