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STB36NM60ND - N-CHANNEL POWER MOSFET

Description

These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology.

Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance.

Features

  • TAB 3 1 D2PAK 3 2 1 TO-247 Figure 1. Internal schematic diagram $ 4!" ' 3 !-V Order codes STB36NM60ND STW36NM60ND VDSS @TJ max. 650 V RDS(on) max. 0.110 Ω ID 29 A.
  • Designed for automotive.

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Datasheet preview – STB36NM60ND

Datasheet Details

Part number STB36NM60ND
Manufacturer STMicroelectronics
File Size 1.29 MB
Description N-CHANNEL POWER MOSFET
Datasheet download datasheet STB36NM60ND Datasheet
Additional preview pages of the STB36NM60ND datasheet.

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Full PDF Text Transcription

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STB36NM60ND, STW36NM60ND Automotive-grade N-channel 600 V, 0.097 Ω typ., 29 A FDmesh™ II Power MOSFETs (with fast diode) in D2PAK and TO-247 packages Datasheet - production data Features TAB 3 1 D2PAK 3 2 1 TO-247 Figure 1. Internal schematic diagram $ 4!" ' 3 !-V Order codes STB36NM60ND STW36NM60ND VDSS @TJ max. 650 V RDS(on) max. 0.110 Ω ID 29 A • Designed for automotive applications and AEC-Q101 qualified • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance • Extremely high dv/dt and avalanche capabilities Applications • Automotive switching applications Description These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology.
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