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STB35N60DM2
N-channel 600 V, 0.094 Ω typ., 28 A MDmesh™ DM2 Power MOSFET in a D²PAK package
Datasheet - production data
TAB
3 1 D2PAK
Figure 1: Internal schematic diagram
Features
Order code
VDS
STB35N60DM2 600 V
RDS(on) max.
0.110 Ω
ID PTOT 28 A 210 W
Fast-recovery body diode Extremely low gate charge and input
capacitance Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected
Applications
Switching applications
Description
This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
STB35N60DM2 Datasheet
