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STB34NM60N - N-CHANNEL POWER MOSFET

Description

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology.

This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

Features

  • TAB 2 3 1 D2PAK TAB 3 2 1 TO-220 Figure 1. Internal schematic diagram ' 7$% .
  •  6  Order codes VDSS STB34NM60N 600 V STP34NM60N RDS(on) 0.105 Ω ID PTOT 31.5 A 250 W.
  • 100% avalanche tested.
  • Low input capacitance and gate charge.
  • Low gate input resistance.

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Datasheet preview – STB34NM60N

Datasheet Details

Part number STB34NM60N
Manufacturer STMicroelectronics
File Size 1.30 MB
Description N-CHANNEL POWER MOSFET
Datasheet download datasheet STB34NM60N Datasheet
Additional preview pages of the STB34NM60N datasheet.

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Full PDF Text Transcription

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STB34NM60N, STP34NM60N N-channel 600 V, 0.092 Ω, 31.5 A MDmesh™ II Power MOSFETs in D²PAK and TO-220 packages Datasheet - production data Features TAB 2 3 1 D2PAK TAB 3 2 1 TO-220 Figure 1. Internal schematic diagram ' 7$% *  6  Order codes VDSS STB34NM60N 600 V STP34NM60N RDS(on) 0.105 Ω ID PTOT 31.5 A 250 W • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance Applications • Switching applications Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.
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