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STB33N60M2 - N-CHANNEL POWER MOSFET

Description

This device is an N-channel Power MOSFET developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg.

This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge.

Features

  • TAB 1 D 2 PAK 3 Figure 1. Internal schematic diagram , TAB AM15572v1 Order code STB33N60M2 VDS @ TJmax 650 V RDS(on) max 0.125 Ω ID 26 A.
  • Extremely low gate charge.
  • Lower RDS(on) x area vs previous generation.
  • MDmesh™ II technology.
  • Low gate input resistance.
  • 100% avalanche tested.
  • Zener-protected.

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Full PDF Text Transcription

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STB33N60M2 N-channel 600 V, 0.108 Ω typ., 26 A MDmesh II Plus™ low Qg Power MOSFETs in a D2PAK package Datasheet - production data Features TAB 1 D 2 PAK 3 Figure 1. Internal schematic diagram , TAB AM15572v1 Order code STB33N60M2 VDS @ TJmax 650 V RDS(on) max 0.125 Ω ID 26 A • Extremely low gate charge • Lower RDS(on) x area vs previous generation • MDmesh™ II technology • Low gate input resistance • 100% avalanche tested • Zener-protected Applications • Switching applications • LCC converters, resonant converters Description This device is an N-channel Power MOSFET developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg.
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