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STB28N60DM2 - N-channel Power MOSFET

Description

These high voltage N-channel Power MOSFETs are part of the MDmesh™ DM2 fast recovery diode series.

Features

  • Order code STB28N60DM2 STP28N60DM2 STW28N60DM2 VDS @ TJmax. 600 V RDS(on) max. ID PTOT 0.16 Ω 21 A 170 W Figure 1: Internal schematic diagram.
  • Fast-recovery body diode.
  • Extremely low gate charge and input capacitance.
  • Low on-resistance.
  • 100% avalanche tested.
  • Extremely high dv/dt ruggedness.
  • Zener-protected.

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Datasheet preview – STB28N60DM2

Datasheet Details

Part number STB28N60DM2
Manufacturer STMicroelectronics
File Size 875.22 KB
Description N-channel Power MOSFET
Datasheet download datasheet STB28N60DM2 Datasheet
Additional preview pages of the STB28N60DM2 datasheet.

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Full PDF Text Transcription

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STB28N60DM2, STP28N60DM2, STW28N60DM2 N-channel 600 V, 0.13 Ω typ., 21 A MDmesh™ DM2 Power MOSFETs in D²PAK, TO-220 and TO-247 packages Datasheet - production data Features Order code STB28N60DM2 STP28N60DM2 STW28N60DM2 VDS @ TJmax. 600 V RDS(on) max. ID PTOT 0.16 Ω 21 A 170 W Figure 1: Internal schematic diagram  Fast-recovery body diode  Extremely low gate charge and input capacitance  Low on-resistance  100% avalanche tested  Extremely high dv/dt ruggedness  Zener-protected Applications  Switching applications Order code STB28N60DM2 STP28N60DM2 STW28N60DM2 Description These high voltage N-channel Power MOSFETs are part of the MDmesh™ DM2 fast recovery diode series.
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