STB20N90K5
Features
Order code
900 V
- Industry’s lowest RDS(on) x area
- Industry’s best Fo M (figure of merit)
- Ultra-low gate charge
- 100% avalanche tested
- Zener-protected
RDS(on ) max. 0.25 Ω
ID 20 A
Applications
- Switching applications
Description
This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
Product status link STB20N90K5
Product summary
Order code
Marking
20N90K5
Package
D²PAK
Packing
Tape and reel
DS11568
- Rev 4
- October 2018 For further information contact your local STMicroelectronics sales office.
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