STB20N65M5
Features
Order codes
STB20N65M5 STI20N65M5 STP20N65M5 STW20N65M5
VDS @ TJmax
RDS(on) max
710 V 0.19 Ω 18 A
- Worldwide best RDS(on)
- area
- Higher VDSS rating and high dv/dt capability
- Excellent switching performance
- 100% avalanche tested
Applications
- Switching applications
D2PAK
I2PAK
3 2 1
TO-220
3 2 1
TO-247
Figure 1. Internal schematic diagram
$4!"
Description
These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is bined with STMicroelectronics’ well-known Power MESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
' 3
!-V
Table 1. Device summary Order codes STB20N65M5 STI20N65M5 STP20N65M5 STW20N65M5
Marking 20N65M5
Package D2PAK I2PAK TO-220...
