STB20N60M2-EP
Features
Order code
RDS(on) max.
600 V
0.278 Ω
- Extremely low gate charge
- Excellent output capacitance (COSS) profile
- Very low turn-off switching losses
- 100% avalanche tested
- Zener-protected
Applications
- Switching applications
- Tailored for very high frequency converters (f > 150 k Hz)
ID 13 A
S(3)
AM01475V1
Product status link STB20N60M2-EP
Product summary
Order code
Marking
20N60M2EP
Package
D²PAK
Packing
Tape and reel
Description
This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhanced performance (EP) technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with very low turn-off switching losses, rendering it suitable for the most demanding very...
