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SGSP591 - N-CHANNEL POWER MOS TRANSISTORS

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.!.'~=:1-m= S~DG©OSO@-~T[]HJ~O©lMJOSO@O~DN©~ SGSP591 SGSP592 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE SGSP591 SGSP592 Voss 60 V 50 V ROS(on) 0.0330 0.0330 10 40 A 40 A • HIGH SPEED SWITCHING APPLICATIONS • 50 - 60 VOLTS FOR INVERTERS AND UPS • HIGH CURRENT - VOS(on) :5 1V at 20A • RATED FOR UNCLAMPED INDUCTIVE SWITCHING (ENERGY TEST) • • EASY DRIVE - REDUCES SIZE AND COST INDUSTRIAL APPLICATIONS: • DC/DC CONVERTERS • MOTOR CONTROLS N - channel enhancement mode POWER MOS field effect transistors. Easy drive and very fast switching times make these POWER MOS transistors ideal for high speed switching circuits applications such as DC/DC converters, UPS, inverters, battery chargers and solar power converters.
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