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SCT070W120G3-4AG - Automotive-grade silicon carbide Power MOSFET

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.

Features

  • Order code SCT070W120G3-4AG VDS 1200 V RDS(on) typ. 63 mΩ ID 30 A HiP247-4 2 34 1 Drain(1, TAB).
  • AEC-Q101 qualified.
  • Very fast and robust intrinsic body diode.
  • Extremely low gate charge and input capacitance.
  • Very high operating junction temperature capability (TJ = 200 °C).
  • Source sensing pin for increased efficiency Gate(4) Driver source(3).

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Datasheet Details

Part number SCT070W120G3-4AG
Manufacturer STMicroelectronics
File Size 216.24 KB
Description Automotive-grade silicon carbide Power MOSFET
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SCT070W120G3-4AG Datasheet Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mΩ typ., 30 A in an HiP247-4 package Features Order code SCT070W120G3-4AG VDS 1200 V RDS(on) typ. 63 mΩ ID 30 A HiP247-4 2 34 1 Drain(1, TAB) • AEC-Q101 qualified • Very fast and robust intrinsic body diode • Extremely low gate charge and input capacitance • Very high operating junction temperature capability (TJ = 200 °C) • Source sensing pin for increased efficiency Gate(4) Driver source(3) Applications Power source(2) ND1TPS2DS3G4 • Main inverter (electric traction) • DC/DC converter for EV/HEV • On board charger (OBC) Description This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.
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