SCT055HU65G3AG - Automotive-grade silicon carbide Power MOSFET

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.

Features

Order code SCT055HU65G3AG VDS 650 V RDS(on) typ. 58 mΩ ID 30 A.
AEC-Q101 qualified.
Very low RDS(on) over the entire temperature range.
High speed switching performances.
Very fast and robust intrinsic body diode.
Source sensing pin for increased efficiency.

STMicroelectronics

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Datasheet Details

Part number	SCT055HU65G3AG
Manufacturer	STMicroelectronics
File Size	649.36 KB
Description	Automotive-grade silicon carbide Power MOSFET
Datasheet	SCT055HU65G3AG Datasheet
Additional preview pages of the SCT055HU65G3AG datasheet.

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Full PDF Text Transcription

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SCT055HU65G3AG Datasheet Automotive-grade silicon carbide Power MOSFET 650 V, 58 mΩ typ., 30 A in an HU3PAK package TAB Gate (1) Driver source (2) 7 1 HU3PAK Drain (TAB) Power source (3, 4, 5, 6, 7) N-chG1DS2PS34567DTAB Features Order code SCT055HU65G3AG VDS 650 V RDS(on) typ. 58 mΩ ID 30 A • AEC-Q101 qualified • Very low RDS(on) over the entire temperature range • High speed switching performances • Very fast and robust intrinsic body diode • Source sensing pin for increased efficiency Applications • Main inverter (electric traction) • DC/DC converter for EV/HEV • On board charger (OBC) Description This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.

Published: Feb 18, 2023 |