Datasheet4U Logo Datasheet4U.com

S6NF20V - N-channel MOSFET

Description

This Power MOSFET has been developed using STMicroelectronics' unique STripFET process, which is specifically designed to minimize input capacitance and gate charge.

Features

  • Order code VDS RDS(on) max. ID 4 1 STS6NF20V 40 mΩ (@4.5 V) 20 V 6A 45 mΩ (@2.7 V) SO-8 1 S 2 S 8 D 7 D.
  • Ultra low threshold gate drive.
  • 100% avalanche tested.
  • Low gate charge.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
S6N1 SCRs Teccor Electronics

Other Datasheets by STMicroelectronics

Part Number Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STS6NF20V Datasheet N-channel 20 V, 30 mΩ typ., 6 A, 2.7 V drive, STripFET II Power MOSFET in an SO-8 package 5 8 Features Order code VDS RDS(on) max. ID 4 1 STS6NF20V 40 mΩ (@4.5 V) 20 V 6A 45 mΩ (@2.7 V) SO-8 1 S 2 S 8 D 7 D • Ultra low threshold gate drive • 100% avalanche tested • Low gate charge Applications • Switching applications S 3 G 4 6 D D 5 Description This Power MOSFET has been developed using STMicroelectronics' unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.
Published: |