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PD57070S-E - RF POWER transistor

Download the PD57070S-E datasheet PDF. This datasheet also covers the PD57070-E variant, as both devices belong to the same rf power transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor.

It is designed for high gain, broad band commercial and industrial applications.

It operates at 28 V in common source mode at frequencies up to 1 GHz.

Key Features

  • Excellent thermal stability.
  • Common source configuration.
  • POUT = 70 W with 14.7dB gain @945 MHz/28 V.
  • New RF plastic package.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PD57070-E-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

More Datasheets from STMicroelectronics

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PD57070-E RF POWER transistor
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PD57018-E RF POWER transistor
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PD57030-E RF POWER transistor
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD57070-E PD57070S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features ■ Excellent thermal stability ■ Common source configuration ■ POUT = 70 W with 14.7dB gain @945 MHz/28 V ■ New RF plastic package Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. Device’s superior linearity performance makes it an ideal solution for base station applications.