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PD55035STR1-E - RF power LDMOS transistor

General Description

The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor.

It is designed for high gain, broad band commercial and industrial applications.

It operates at 12 V in common source mode at frequencies of up to 1 GHz.

Key Features

  • Order code Frequency VDD PD55035STR1-E 500 MHz 12.5 V.
  • Excellent thermal stability.
  • Common source configuration.
  • POUT = 35 W with 16.9 dB at 500 MHz, 12.5 V.
  • New RF plastic package POUT 35 W Gain 16.9 dB Efficiency 62%.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD55035STR1-E Datasheet 35 W, 12.5 V, HF to 1 GHz RF power LDMOS transistor 1 3 2 PowerSO-10RF (straight lead) Pin connection Pin Connection 1 Drain 2 Source 3 Gate Features Order code Frequency VDD PD55035STR1-E 500 MHz 12.5 V • Excellent thermal stability • Common source configuration • POUT = 35 W with 16.9 dB at 500 MHz, 12.5 V • New RF plastic package POUT 35 W Gain 16.9 dB Efficiency 62% Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz.