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STP4NM60 STD3NM60, STD3NM60-1
N-channel 600 V, 1.3 Ω, 3 A TO-220, DPAK, IPAK Zener-protected MDmesh™ Power MOSFET
Features
Type
VDSS
RDS(on)
(@Tjmax) max
)STD3NM60
t(sSTD3NM60-1 650 < 1.5 Ω
cSTP4NM60
ID 3A 4A
PW 42 W 69 W
rodu■ High dv/dt and avalanche capabilities te P■ Improved ESD capability le■ Low input capacitance and gate charge o■ Low gate input resistance bs■ Tight process control and high manufacturing Oyields t(s) -Applications c■ Switching roduDescription PModems technology applies the benefits of the temultiple drain process to STMicroelectronics' well-
known PowerMESH™ horizontal layout structure.
leThe resulting product offers low on-resistance, sohigh dv/dt capability and excellent avalanche Obcharacteristics.
3 2 1
TO-220
3 1
DPAK
IPAK
3
2 1
Figure 1.
P4NM60 Datasheet
