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P4NK60Z - STP4NK60Z

Description

These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout.

Features

  • TAB 3 2 1 TO-220 3 2 1 TO-220FP Order codes VDS RDS(on) max. PTOT STP4NK60Z 600 V 2 Ω 70 W STP4NK60ZFP.
  • 100% avalanche tested.
  • Very low intrinsic capacitances.
  • Zener-protected ID 4A Figure 1. Internal schematic diagram D(2, TAB) G(1).

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Full PDF Text Transcription

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STP4NK60Z, STP4NK60ZFP N-channel 600 V, 1.7 Ω typ., 4 A Zener-protected SuperMESH™ Power MOSFETs in TO-220 and TO-220FP packages Datasheet - production data Features TAB 3 2 1 TO-220 3 2 1 TO-220FP Order codes VDS RDS(on) max. PTOT STP4NK60Z 600 V 2 Ω 70 W STP4NK60ZFP • 100% avalanche tested • Very low intrinsic capacitances • Zener-protected ID 4A Figure 1. Internal schematic diagram D(2, TAB) G(1) Applications • Switching applications Description These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout.
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