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MJD32CT4-A - Automotive-grade low voltage PNP power transistor

General Description

The device is manufactured in planar technology with a “base island” layout.

The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage.

Key Features

  • AEC-Q101 qualified.
  • Surface-mounting TO-252 power package in tape and reel.
  • Complementary to the NPN type MJD31CT4-A.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MJD32CT4-A Datasheet Automotive-grade low voltage PNP power transistor TAB 23 1 DPAK C(2, TAB) B(1) E(3) SC07710_TAB Features • AEC-Q101 qualified • Surface-mounting TO-252 power package in tape and reel • Complementary to the NPN type MJD31CT4-A Application • General purpose linear and switching equipment Description The device is manufactured in planar technology with a “base island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Product status link MJD32CT4-A Product summary Order code MJD32CT4-A Marking MJD32C Package DPAK Packing Tape and reel DS5315 - Rev 6 - July 2024 For further information contact your local STMicroelectronics sales office. www.st.