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L75NH3LL - N-channel MOSFET

Description

t(s so This application specific Power MOSFET is the c b latest generation of STMicroelectronics unique du O “STripFET™” technology.

The resulting transistor ro ) - is optimized for low on-resistance and minimal P t(s gate charge.

Features

  • Type VDSS RDS(on) max ID STL75NH3LL 30V < 0.0057 Ω 20 A (1) t(s) 1. This value is according Rthj-pcb c.
  • Improved die-to-footprint ratio u.
  • Very low profile package (1mm max) rod ).
  • Very low thermal resistance P t(s.
  • Very low gate charge te c.
  • Low threshold device sole rodu.

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    STL75NH3LL N-channel 30 V, 0.004 Ω, 20 A, PowerFLAT™ (6x5) ultra low gate charge STripFET™ Power MOSFET Features Type VDSS RDS(on) max ID STL75NH3LL 30V < 0.0057 Ω 20 A (1) t(s) 1. This value is according Rthj-pcb c ■ Improved die-to-footprint ratio u ■ Very low profile package (1mm max) rod ) ■ Very low thermal resistance P t(s ■ Very low gate charge te c ■ Low threshold device sole rodu Application b P ■ Switching applications ) - O lete Description t(s so This application specific Power MOSFET is the c b latest generation of STMicroelectronics unique du O “STripFET™” technology. The resulting transistor ro ) - is optimized for low on-resistance and minimal P t(s gate charge.
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