IRF640S
DESCRIPTION
This power MOSFET is designed using he pany’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances pared with standard parts from various sources.
D2PAK TO-263 (suffix ”T4”)
APPLICATIONS s HIGH CURRENT SWITCHING s UNINTERRUPTIBLE POWER SUPPLY (UPS) s DC/DC COVERTERS FOR TELE, INDUSTRIAL, AND LIGHTING EQUIPMENT.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V DS V DGR V GS ID ID I DM (
- ) P tot dv/dt( 1) Ts tg Tj Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 o C Drain Current (continuous) at Tc = 100 o C Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature o
Value 200 200 ± 20 18 11 72 125 1.0 5 -65 to 150 150
( 1) ISD ≤ 18A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Un it V V V A A A W W /o C V/ns o...
