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IRF 520/FI-521/FI IRF 522/FI-523/FI
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
TYPE
IRF520 IRF520FI
IRF521 IRF521FI
IRF522 IRF522FI
IRF523 IRF523FI
Voss
100 V 100 V
80 V 80 V
100 V 100 V
80 V 80 V
Ros(on)
0.270 0.270
0.270 0.27 0
0.36 0 0.36 0
0.36 0 0.36 0
10 •
9.2 A 7A
9.2 A 7A
8A 6A
8A 6A
e 80-1 00 VOLTS - FOR DC/DC CONVERTERS e HIGH CURRENT e RATED FOR UNCLAMPED INDUCTIVE
SWITCHING (ENERGY TEST) • e ULTRA FAST SWITCHING e EASY DRIVE- FOR REDUCED COST AND SIZE
INDUSTRIAL APPLICATIONS: e UNINTERRUPTIBLE POWER SUPPLIES e MOTOR CONTROLS
N - channel enhancement mode POWER MOS field effect transistors. Easy drive and very fast switching times make these POWER MOS transistors ideal for high speed switching applications.
IRF521 Datasheet
