Download GP100N30 Datasheet PDF
STMicroelectronics
GP100N30
Features - Optimized for sustain and energy recovery circuits in PDP applications. - State-of-the-art STrip FET™ technology - Peak collector current IRP = 330 A @ TC = 25 °C (see Table 2) 3 2 1 TO-220FP 3 2 1 TO-247 - Very low-on voltage drop (VCE(sat)) and energy per pulse for improved panel efficiency )- High repetitive peak current capability ct(s Description du Advanced high-density and high-current IGBT rotechnology with low-drop panion diode Padapted to various functions in PDP sets. 3 2 1 TO-220 Figure 1. Internal schematic diagram lete Product(s) - Obsolete Table 1. Device summary so Order codes Ob STGF100N30 Marking GF100N30 Package TO-220FP Packaging Tube STGP100N30 TO-220 Tube STGW100N30 GW100N30 TO-247 Tube February 2009 Rev 1 1/13 .st. Contents Contents STGF100N30, STGP100N30, STGW100N30 1 Electrical ratings - - - - -...