G60V60DF Datasheet Trench gate field-stop IGBT

Manufacturer: STMicroelectronics

G60V60DF trench gate field-stop igbt by STMicroelectronics - Datasheet Preview

Datasheet Details

Part number	G60V60DF
Manufacturer	STMicroelectronics
File Size	1.54 MB
Description	Trench gate field-stop IGBT
Datasheet	G60V60DF Datasheet

General Description

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure.

These devices are part of the V series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters.

Furthermore, a positive VCE(sat) temperature

Overview

STGW60V60DF, STGWA60V60DF STGWT60V60DF Trench gate field-stop IGBT, V series 600 V, 60 A very high speed Datasheet - production data 3 2 1 TO-247 TAB TO-247 long.

Key Features

Maximum junction temperature: TJ = 175 °C.
Tail-less switching off.
VCE(sat) = 1.85 V (typ. ) @ IC = 60 A.
Tight parameter distribution.
Safe paralleling.
Low thermal resistance.
Very fast soft recovery antiparallel diode 3 2 1 TO-3P Figure 1. Internal schematic diagram C (2 or TAB).

More Datasheets from STMicroelectronics

Part Number	Description