G4M65DF2 Datasheet Trench gate field-stop IGBT

Manufacturer: STMicroelectronics

G4M65DF2 trench gate field-stop igbt by STMicroelectronics - Datasheet Preview

Datasheet Details

Part number	G4M65DF2
Manufacturer	STMicroelectronics
File Size	416.53 KB
Description	Trench gate field-stop IGBT
Datasheet	G4M65DF2 Datasheet

General Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure.

The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential.

Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.

Overview

STGB4M65DF2 Trench gate field-stop IGBT, M series 650 V, 4 A low loss Datasheet - production data TAB 2 3 1 D²PAK Figure 1: Internal schematic.

Key Features

6 µs of short-circuit withstand time.
VCE(sat) = 1.6 V (typ. ) @ IC = 4 A.
Tight parameter distribution.
Safer paralleling.
Low thermal resistance.
Soft and very fast recovery antiparallel diode.

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