Datasheet Details
| Part number | G30M65DF2 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 689.49 KB |
| Description | Trench gate field-stop IGBT |
| Datasheet |
 G30M65DF2 Datasheet
|
|
|
| Part number | G30M65DF2 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 689.49 KB |
| Description | Trench gate field-stop IGBT |
| Datasheet |
G30M65DF2 Datasheet
|
|
|
|
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure.
The device is part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short-circuit capability are essential.
Furthermore, a positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.
STGP30M65DF2 Trench gate field-stop IGBT, M series 650 V, 30 A low-loss in a TO-220 package Datasheet - production data TAB TO-220 1 23 Figure 1: Internal schematic.
| Part Number | Description |
|---|