Datasheet Details
| Part number | ESM765800 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 84.21 KB |
| Description | RECOVERY RECTIFIER DIODES |
| Datasheet |
 ESM765800 Datasheet
|
|
|
| Part number | ESM765800 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 84.21 KB |
| Description | RECOVERY RECTIFIER DIODES |
| Datasheet |
ESM765800 Datasheet
|
|
|
|
Fast recovery rectifiers suited for applications in combination with superswitch transistors.
A K 10 A 800 V 150°C 1.35 V 300 ns TO-220AC Symbol VRRM IF(RMS) IF(AV) IFSM Ptot Tstg Tj Parameter Repetitive peak reverse voltage RMS forward current Average forward current Surge non repetitive forward current Power dissipation Storage temperature range Maximum operating junction temperature Tc = 100°C δ = 0.5 Tp = 10 ms Sinusoidal Tc = 100°C tp ≤ 20µs Value 800 16 10 120 20 - 40 to + 150 + 150 Unit V A A A W °C August 1999 - Ed: 2B 1/5 ESM765-800 THERMAL RESISTANCES Symbol Rth(j-c) Junction to case Parameter Value 2 Unit °C/W STATIC ELECTRICAL CHARACTERISTICS Symbol IR * VF ** Parameters Reverse leakage current Forward voltage drop Test conditions Tj = 25°C Tj = 100°C Tj = 25°C Tj = 100°C Pulse test : * tp = 5 ms, δ < 2 % ** tp = 380 µs, δ < 2 % Min.
Typ.
® ESM765-800 RECOVERY RECTIFIER DIODES MAIN PRODUCTS CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) trr.
| Part Number | Description |
|---|---|
| ESM765-800 | RECOVERY RECTIFIER DIODES |
| ESM765PI-800 | RECOVERY RECTIFIER DIODES |
| ESM7004 | (ESMxxxx) Power Bipolar |
| ESM7005 | (ESMxxxx) Power Bipolar |
| ESM7006 | (ESMxxxx) Power Bipolar |
| ESM7007 | (ESMxxxx) Power Bipolar |
| ESM7008 | (ESMxxxx) Power Bipolar |
| ESM7009 | (ESMxxxx) Power Bipolar |
| ESM738T | (ESMxxxx) Power Bipolar |
| ESM1000T | (ESMxxxx) Power Bipolar |