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ESDA8V2-1MX2 - EOS and ESD Transil protection

General Description

The ESDA8V2-1MX2 is a unidirectional single line Transil diode designed specifically for the protection of integrated circuits in portable equipment and miniaturized electonic devices subject to EOS and ESD transient overvoltages.

Key Features

  • Breakdown voltage VBR = 8.2 V Unidirectional device High peak power dissipation: 500 W (8/20 µs waveform) ESD protection level better than IEC 61000-4-2, level 4: 30 kV contact discharge Low leakage current (< 0.5 µA @ 5 V) Very small PCB area (1.45 mm2) RoHS compliant Figure 1. Functional diagram (top view) µQFN 2L package.
  • Benefits.
  • High EOS and ESD protection level High integration Suitable for high density boards Tiny packag.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com ESDA8V2-1MX2 EOS and ESD Transil™ protection for charger and battery port Features ■ ■ ■ ■ Breakdown voltage VBR = 8.2 V Unidirectional device High peak power dissipation: 500 W (8/20 µs waveform) ESD protection level better than IEC 61000-4-2, level 4: 30 kV contact discharge Low leakage current (< 0.5 µA @ 5 V) Very small PCB area (1.45 mm2) RoHS compliant Figure 1.