B36NF06 - N-channel Power MOSFET

Description

This Power MOSFET has been developed using STMicroelectronics' unique STripFET process, which is specifically designed to minimize input capacitance and gate charge.

Features

Order codes STB36NF06LT4 STP36NF06L VDS 60 V 60 V.
AEC-Q101 qualified.
Exceptional dv/dt capability.
100% avalanche tested.
Low gate charge RDS(on) max. 40 mΩ 40 mΩ ID 30 A 30 A G(1) S(3).

STMicroelectronics

📥 Download Datasheet

Datasheet Details

Part number	B36NF06
Manufacturer	STMicroelectronics
File Size	543.81 KB
Description	N-channel Power MOSFET
Datasheet	B36NF06 Datasheet
Additional preview pages of the B36NF06 datasheet.

📁 Similar Datasheet

B36 - Double Triodes (Marconi)
B360 - 3.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER (Diodes Incorporated)
B360 - 3 AMP SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER (Fuji Electric)
B3605 - SAW Components Low-loss Filter (EPCOS)
B3606 - Low-Loss Filter (EPCOS)
B3607 - SAW Components Low-loss Filter (EPCOS)
B3608 - SAW Components Low-loss Filter (EPCOS)
B360A - Schottky Barrier Rectifier (Vishay)
B360A - 3.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER (DIODES)
B360A-M3 - Schottky Barrier Rectifier (Vishay)

Other Datasheets by STMicroelectronics

Full PDF Text Transcription

Click to expand full text

STB36NF06L, STP36NF06L Datasheet Automotive-grade N-channel 60 V, 32 mΩ typ., 30 A STripFET II Power MOSFET in a D²PAK and TO-220 packages TAB TAB 3 1 D2PAK TO-220 1 23 D(2, TAB) Features Order codes STB36NF06LT4 STP36NF06L VDS 60 V 60 V • AEC-Q101 qualified • Exceptional dv/dt capability • 100% avalanche tested • Low gate charge RDS(on) max. 40 mΩ 40 mΩ ID 30 A 30 A G(1) S(3) Applications • Switching applications AM01475v1_noZen Description This Power MOSFET has been developed using STMicroelectronics' unique STripFET process, which is specifically designed to minimize input capacitance and gate charge.

Published: Sep 28, 2023 |